How is electric conduction produced in an intrinsic semiconductor?

Which one of the following statements is true? $A$ p-type semiconductor is doped with

$A$ pure semiconductor crystal has $5 \times 10^{22}$ atoms per $cm^3$. It is doped by $1$ ppm concentration of pentavalent element. The number of holes in the doped semiconductor is (given that $n_i = 1.5 \times 10^{10} cm^{-3}$):

In a $p$-type semiconductor,which of the following statements is true?

The typical ionisation energy of a donor in silicon is.....$eV$

In a $P$-type semiconductor, the acceptor energy level $E_A$ is located $57 \, meV$ above the valence band. The maximum wavelength required to create a hole is ....... $\mathring{A}$. (Given: $h = 6.6 \times 10^{-34} \, J \, s$, $c = 3 \times 10^8 \, m/s$, $1 \, eV = 1.6 \times 10^{-19} \, J$)